Resonant Tunneling in T-stub Low-Dimensional Conductor

doi:10.3696/j.issn.1672-6952.2010.03.026

Journal of Liaoning Petrochemical University ›› 2010, Vol. 30 ›› Issue (3): 96-98.DOI: 10.3696/j.issn.1672-6952.2010.03.026

Resonant Tunneling in T-stub Low-Dimensional Conductor

MA Jing-min

Department of Physics, Bohai University, Jinzhou Liaoning 121013,P.R.China

Received:2010-05-22 Published:2010-09-25 Online:2017-07-05

T-stub型低维导体中的共振隧穿效应

马敬敏

渤海大学物理系,辽宁锦州121013

作者简介:马敬敏(1966-),女,辽宁葫芦岛市,高级实验师。
基金资助:
国家自然科学基金(10647101)。

Abstract

Abstract:

The electron resonant tunneling in a T-stub low-dimensional conductor was studied in terms of the lattice Green’s function method. The numerical calculations show that the electrons can pass through the conductor for some Fermi levels. With the increase of the Fermi energy, more and more transport model take apart in the tunneling, and then the transmission increase from 1 to 2, 3 and so on. The numerical calculation results will be helpful for quantum device design.

Key words: T-stub , Lattice Green’s function , Resonant tunneling

摘要： 用格点格林函数的方法研究T-stub型低维导体中的共振隧穿效应。计算结果表明,电子能够在一
定费米能级处完全穿过整个导体,呈现共振隧穿的行为。随着费米能级的增加,参与隧穿的模数增加,透射系数的
最大值也从1变成2,3等。计算结果对量子器件的设计有一定的帮助作用。

关键词: T-stub , 格点格林函数 , 共振隧穿

MA Jing-min. Resonant Tunneling in T-stub Low-Dimensional Conductor[J]. Journal of Liaoning Petrochemical University, 2010, 30(3): 96-98.

马敬敏. T-stub型低维导体中的共振隧穿效应[J]. 辽宁石油化工大学学报, 2010, 30(3): 96-98.

Resonant Tunneling in T-stub Low-Dimensional Conductor

T-stub型低维导体中的共振隧穿效应

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